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IS41C16100-50TL Datasheet(PDF) 7 Page - Integrated Silicon Solution, Inc

Part # IS41C16100-50TL
Description  1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
PDF  23 Pages
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS41C16100-50TL Datasheet(HTML) 7 Page - Integrated Silicon Solution, Inc

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IS41C16100
IS41LV16100
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev. L
12/22/05
ISSI®
AC CHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
tRC
Random READ or WRITE Cycle Time
84
—
104
—
ns
tRAC
Access Time from
RAS(6, 7)
—50
—
60
ns
tCAC
Access Time from
CAS(6, 8, 15)
—13
—
15
ns
tAA
Access Time from Column-Address(6)
—25
—
30
ns
tRAS
RAS Pulse Width
50
10K
60
10K
ns
tRP
RAS Precharge Time
30
—
40
—
ns
tCAS
CAS Pulse Width(26)
8
10K
10
10K
ns
tCP
CAS Precharge Time(9, 25)
9—
9—
ns
tCSH
CAS Hold Time (21)
38
—
40
—
ns
tRCD
RAS to CAS Delay Time(10, 20)
12
37
14
45
ns
tASR
Row-Address Setup Time
0
—
0
—
ns
tRAH
Row-Address Hold Time
8
—
10
—
ns
tASC
Column-Address Setup Time(20)
0—
0—
ns
tCAH
Column-Address Hold Time(20)
8—
10
—
ns
tAR
Column-Address Hold Time
30
—
40
—
ns
(referenced to
RAS)
tRAD
RAS to Column-Address Delay Time(11)
10
25
12
30
ns
tRAL
Column-Address to
RAS Lead Time
25
—
30
—
ns
tRPC
RAS to CAS Precharge Time
5
—
5
—
ns
tRSH
RAS Hold Time(27)
8—
10
—
ns
tRHCP
RAS Hold Time from CAS Precharge
37
—
37
—
ns
tCLZ
CAS to Output in Low-Z(15, 29)
0—
0—
ns
tCRP
CAS to RAS Precharge Time(21)
5—
5—
ns
tOD
Output Disable Time(19, 28, 29)
315
3
15
ns
tOE
Output Enable Time(15, 16)
—13
—
15
ns
tOED
Output Enable Data Delay (Write)
20
—
20
—
ns
tOEHC
OE HIGH Hold Time from CAS HIGH
5
—
5
—
ns
tOEP
OE HIGH Pulse Width
10
—
10
—
ns
tOES
OE LOW to CAS HIGH Setup Time
5
—
5
—
ns
tRCS
Read Command Setup Time(17, 20)
0—
0—
ns
tRRH
Read Command Hold Time
0
—
0
—
ns
(referenced to
RAS)(12)
tRCH
Read Command Hold Time
0
—
0
—
ns
(referenced to
CAS)(12, 17, 21)
tWCH
Write Command Hold Time(17, 27)
8—
10
—
ns
tWCR
Write Command Hold Time
40
—
50
—
ns
(referenced to
RAS)(17)



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