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M29W640DB Datasheet(PDF) 16 Page - STMicroelectronics |
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M29W640DB Datasheet(HTML) 16 Page - STMicroelectronics |
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16 / 49 page ![]() M29W640DT, M29W640DB 16/49 Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH. Table 6. Program, Erase Times and Program, Erase Endurance Cycles Note: 1. Typical values measured at room temperature and nominal voltages. 2. Sampled, but not 100% tested. 3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles. 4. Maximum value measured at worst case conditions for both temperature and VCC. Program 4 AAA AA 555 55 AAA A0 PA PD Quadruple Byte Program 5 AAA 55 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3 Unlock Bypass 3 AAA AA 555 55 AAA 20 Unlock Bypass Program 2 X A0 PA PD Unlock Bypass Reset 2 X 90 X 00 Chip Erase 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10 Block Erase 6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30 Erase Suspend 1 X B0 Erase Resume 1 X 30 Read CFI Query 1 AA 98 Enter Extended Block 3 AAA AA 555 55 AAA 88 Exit Extended Block 4 AAA AA 555 55 AAA 90 X 00 Parameter Min Typ (1, 2) Max(2) Unit Chip Erase 80 400(3) s Block Erase (64 KBytes) 0.8 6(4) s Erase Suspend Latency Time 50(4) µs Program (Byte or Word) 10 200(3) µs Double Word Program (Byte or Word) 10 200(3) µs Chip Program (Byte by Byte) 80 400(3) s Chip Program (Word by Word) 40 200(3) s Chip Program (Quadruple Byte or Double Word) 20 100(3) s Program/Erase Cycles (per Block) 100,000 cycles Data Retention 20 years Command Bus Write Operations 1st 2nd 3rd 4th 5th 6th Add Data Add Data Add Data Add Data Add Data Add Data |
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