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DIW040F135 Datasheet(PDF) 2 Page - Diotec Semiconductor

Part # DIW040F135
Description  Fast Switching IGBTwith Reverse Diode Schnell Schaltender IGBT mit Rückwärtsdiode
PDF  4 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

DIW040F135 Datasheet(HTML) 2 Page - Diotec Semiconductor

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DIW040F135
Characteristics (static)
Kennwerte (statisch)
Tj = 25°C
Min.
Typ.
Max.
Collector-Emitter breakdown voltage – Kollektor-Emitter-Durchbruchspannung
IC = 1 mA
VGS = 0 V (short)
V(BR)CES
1350 V
–
–
Collector-Emitter leakage current – Kollektor-Emitter Leckstrom
VCE = VCES
VGS = 0 V (short)
ICES
–
–
100 µA
Gate-Emitter leakage current – Gate-Emitter Leckstrom
VGS = ±20 V VCE = 0 V (short)
IGES
–
–
± 100 nA
Gate-Emitter threshold voltage – Gate-Emitter Schwellspannung
VGE = VCE
IC = 1 mA
VGE(th)
4.8 V
5.8 V
6.8 V
Collector-Emitter saturation voltage – Kollektor-Emitter Sättigungsspannung
VGE = 15 V
IC = 40 A
Tj = 25°C
Tj = 125°C
VCE(sat)
–
2.1 V
2.4 V
–
Characteristics (dynamic)
Kennwerte (dynamisch)
Tj = 25°C
Min.
Typ.
Max.
Input Capacitance – Eingangskapazität
VCE = 25 V
VGE = 0 V
f = 1 MHz
Ciss
–
3000 pF
–
Output Capacitance – Ausgangskapazität
VCE = 25 V
VGE = 0 V
f = 1 MHz
Coss
–
230 pF
–
Reverse Transfer Capacitance – Rückwirkungskapazität
VCE = 25 V
VGE = 0 V
f = 1 MHz
Crss
–
115 pF
–
Turn-On Delay & Rise Time – Einschaltverzögerung und Anstiegszeit
VCC = 600 V
IC = 30 A
VGE = +15 V
RG = 4.7 Ω
L = 500 µH
(Fig. 1)
TJ= 25°C
td(on)
tr
–
21 ns
24 ns
–
TJ= 175°C
td(on)
tr
–
16 ns
32 ns
–
Turn-Off Delay Time & Fall Time – Ausschaltverzögerung und Abfallzeit
VCC = 600 V IC = 30 A
VGE = –15 V
RG = 4.7
L = 500 µH
(Fig. 1)
TJ= 25°C
td(off)
tf
–
95 ns
290 ns
–
TJ= 175°C
td(off)
tf
–
174 ns
373 ns
–
Turn-On Energy – Einschaltenergie
1)
VCC = 600 V IC = 30 A
VGE = +15 V
RG = 4.7 Ω L = 500 µH
(Fig. 1)
TJ= 25°C
Eon
–
3 mJ
–
TJ= 175°C
3.7 mJ
Turn-Off Energy – Ausschaltenergie
2
)
VCC = 600 V IC = 30 A
VGE = –15 V
RG = 4.7 Ω L = 500 µH
(Fig. 1)
TJ= 25°C
Eoff
–
1.5 mJ
–
TJ= 175°C
3.2 mJ
Intrinsic Gate resistance – Innerer Gatewiderstand
f = 1 Mhz
C open
RGi
–
tbd Ω
–
1
Including reverse recovery losses – Einschließlich Sperrverzugsverluste
2
Including current tail losses – Einschließlich Stromschweifverluste
2
http://www.diotec.com/
© Diotec Semiconductor AG



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