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DIW040F135 Datasheet(PDF) 3 Page - Diotec Semiconductor |
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DIW040F135 Datasheet(HTML) 3 Page - Diotec Semiconductor |
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3 / 4 page ![]() DIW040F135 Characteristics (diode) Kennwerte (Diode) Tj = 25°C Min. Typ. Max. Forward voltage – Durchlass-Spannung VGE = 0 V IF = 40 A VF – 2.4 V – Peak reverse recovery current – Rückstromspitze VCC = 600 V IC = 40 A VGE = +15 V RG = 4.7 Ω L = 500 µH (Fig. 1) Irr – 39 A – Reverse recovery charge – Sperrverzugsladung VCC = 600 V IC = 30 A VGE = +15 V RG = 4.7 Ω L = 500 µH (Fig. 1) Qrr – 1.6 µC – Characteristics (thermal) Kennwerte (thermisch) Typical thermal resistance junction to case Typischer Wärmewiderstand Sperrschicht – Gehäuse RthC 0.55 K/W 1) Dimensions - Maße [mm] Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Measured at heat flange – Gemessen an der Kühlfahne © Diotec Semiconductor AG http://www.diotec.com/ 3 Relative transient thermal impedance vs. pulse duration Relativer transienter Wärmewiderstand über Impulsdauer Z thC 10 [s] 10 10 10 10 [t ] 1 -5 -4 -3 -2 -1 p 10 -1 1 10 -3 10-2 D 0 0 t T p D =t /T p 0.5 0.1 0.01 0.005 0.05 0.3 [%] P tot 120 100 80 60 40 20 0 [°C] T C 150 100 50 0 Power dissipation versus case temperature Verlustleistung in Abh. von d. Gehäusetemp. t d(on) V GE 90% 10% V CE t r t d(off) t f Fig. 1 Test circuit for switching times and energies (“rise“ and “fall“ refer to I ) C Testaufbau für Schaltzeiten und -Energien (“rise“ und “fall“ beziehen sich auf I C) V GE R G V CE V CC I C L |
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