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DMN3006SCA6 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN3006SCA6
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN3006SCA6 Datasheet(HTML) 4 Page - Diodes Incorporated

  DMN3006SCA6 Datasheet HTML 1Page - Diodes Incorporated DMN3006SCA6 Datasheet HTML 2Page - Diodes Incorporated DMN3006SCA6 Datasheet HTML 3Page - Diodes Incorporated DMN3006SCA6 Datasheet HTML 4Page - Diodes Incorporated DMN3006SCA6 Datasheet HTML 5Page - Diodes Incorporated DMN3006SCA6 Datasheet HTML 6Page - Diodes Incorporated DMN3006SCA6 Datasheet HTML 7Page - Diodes Incorporated DMN3006SCA6 Datasheet HTML 8Page - Diodes Incorporated  
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DMN3006SCA6
Document number: DS41380 Rev. 3 - 2
4 of 8
www.diodes.com
July 2020
© Diodes Incorporated
DMN3006SCA6
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.01
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (
℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS = 4.5V, IS = 5.0A
V
GS = 8.0V, IS = 5.0A
V
GS = 10V, IS = 5.0A
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (
℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
S = 1mA
I
S = 250μA
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (
℃)
Figure 6. On-Resistance Variation with Junction
Temperature
V
GS = 4.5V, IS = 5.0A
V
GS = 8.0V, IS = 5.0A
V
GS = 10V, IS = 5.0A
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0
5
10
15
20
25
30
I
S, SOURCE-SOURCE CURRENT (A)
Figure 5. Typical On-Resistance vs. Source Current
and Junction Temperature
V
GS = 10V
TJ = -55
℃
TJ = 25
℃
TJ = 85
℃
TJ = 125
℃
TJ = 150
℃



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