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STF15NM65N Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF15NM65N
Description  N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF15NM65N Datasheet(HTML) 5 Page - STMicroelectronics

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STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Electrical characteristics
5/18
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =325 V, ID = 7.75 A
RG =4.7 Ω VGS = 10 V
(see Figure 18)
25
8
80
26
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
15.5
62
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 15.5 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15.5 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 25 °C
(see Figure 20)
460
6
27
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15.5 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 20)
600
8
27
ns
µC
A



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