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PISOS510DFGTSP Datasheet(PDF) 6 Page - Texas Instruments

Part # PISOS510DFGTSP
Description  ISOS510-SP Radiation Hardened, Current-Driven Analog Isolator With Transistor Output
PDF  22 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

PISOS510DFGTSP Datasheet(HTML) 6 Page - Texas Instruments

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5.6 Safety Limiting Values
Safety limiting(1) intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SO-4 PACKAGE (DFG)
IS
Safety limiting input current
RθJA= 283.9℃/W, VF = 1.4V, TJ = 150℃,
TA = 25℃
300
mA
RθJA=283.9℃/W, VCEO = 40V, TJ = 150℃,
TA = 25℃
10.5
mA
RθJA= 283.9℃/W, VCEO = 24V, TJ =150℃,
TA = 25℃
17.5
mA
RθJA= 283.9℃/W, VCEO = 15V, TJ =
150
℃, TA = 25℃
28
mA
PS
Safety limiting total power
RθJA= 283.9℃/W, TJ = 150℃, TA = 25℃
420
mW
TS
Maximum safety temperature
150
℃
(1)
The IS and PS parameters represent the safety current and safety power respectively. The maximum limits of IS and PS must not be
exceeded. These limits vary with the ambient temperature, TA.
The junction-to-air thermal resistance, RθJA, in the table is that of a device installed on a high-K test board for leaded surface-mount
packages. Use these equations to calculate the value for each parameter:
TJ = TA + RθJA × P, where P is the power dissipated in the device.
TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum allowed junction temperature.
PS = IS × VI, where VI is the maximum input voltage.
ISOS510-SP
SLVSJM3 – MAY 2026
www.ti.com
6
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Copyright © 2026 Texas Instruments Incorporated
Product Folder Links: ISOS510-SP



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