IRFP4410ZPBF datasheet(4/8 Pages) IRF

4 / 8 page

IRFP4410ZPbF

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Fig 8. Maximum Safe Operating Area

Fig 10. Drain-to-Source Breakdown Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 11. Typical COSS Stored Energy

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Temperature ( °C )

100

105

110

115

120

125

Id = 5mA

-10 0

10 20 30 40 50 60 70 80 90 100

VDS, Drain-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.0

0.5

1.0

1.5

2.0

2.5

VSD, Source-to-Drain Voltage (V)

0.1

100

1000

TJ = 25°C

TJ = 175°C

VGS = 0V

100

VDS, Drain-to-Source Voltage (V)

100

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

Tc = 25°C

Tj = 175°C

Single Pulse

100µsec

1msec

10msec

100

125

150

175

Starting TJ , Junction Temperature (°C)

100

200

300

400

500

600

700

800

900

1000

TOP

6.4A

9.4A

BOTTOM 58A

100

125

150

TC , Case Temperature (°C)

100

IRFP4410ZPBF Datasheet(PDF) 4 Page - International Rectifier

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