DIO1298

Version 1.2, Apr 2026

www.dioo.com

© 2026 Dioo Microcircuits Co., Ltd. Jiangsu

3

4. ESD Ratings

When a statically-charged person or object touches an electrostatic discharge sensitive device, the

electrostatic charge might be drained through sensitive circuitry in the device. If the electrostatic discharge

possesses sufficient energy, damage might occur to the device due to localized overheating.

Model

Condition

Value

Unit

HBM

ANSI/ESDA/JEDEC JS-001

±3

kV

CDM

ANSI/ESDA/JEDEC JS-002

±2

kV

5. Thermal Considerations

The thermal resistance determines the heat insulation property of a material. The higher the thermal

resistance is, the lower the heat loss. Accumulation of heat energy degrades the performance of

semiconductor components.

Symbol

Metric

Value

Unit

RθJA

Junction-to-ambient thermal resistance

47.84

°C/W

RθJB

Junction-to-board thermal resistance

25.19

°C/W

RθJC

Junction-to-case thermal resistance

15.50

°C/W

6. Electrical Characteristics

TA = -40°C to 85°C, VIN = 3 V to 32 V. Typical values are at TA = 25°C, VIN = 5 V, unless otherwise noted.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Supply

VIN

Input voltage

3

32

V

VUVLO

Undervoltage lockout

VIN rising threshold

2.7

2.9

V

Hysteresis

160

mV

IQ

No-load supply current

Enabled, VIN = 5 V, OUT = open

180

243

293

µA

Enabled, VIN = 20 V, OUT = open

192

251

295

Enabled, VIN = 28 V, OUT = open

190

254

300

ISHDN

Shutdown supply current

Shutdown, VIN = 5 V, OUT = open

1.3

3

µA

Shutdown, VIN = 20 V, OUT = open

1.8

5

Shutdown, VIN = 28 V, OUT = open

2

5.5

VOUT

Output voltage

3

32

V

IOUT_RCP

Output supply current in RCP

Enabled, VIN = 0 V, VOUT = 5 V

161

200

µA