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M59BW102 Datasheet(PDF) 3 Page - STMicroelectronics |
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M59BW102 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 24 page ![]() 3/24 M59BW102 SIGNAL DESCRIPTIONS See Figure 1 and Table 1. Address Inputs (A0-A15). The address inputs for the memory array are latched during a write op- eration on the falling edge of Chip Enable E or Write Enable W. When A9 is raised to VID, either a Read Electronic Signature Manufacturer or Device Code is enabled depending on the combination of levels on A0 and A1. Data Inputs/Outputs (DQ0-DQ15). The input is data to be programmed in the memory array or a command to be written to the C.I. Both are latched on the rising edge of Chip Enable E or Write En- able W. The output is data from the Memory Array, the Electronic Signature Manufacturer or Device codes, the Status register Data Polling bit DQ7, the Toggle Bits DQ6 and DQ2, the Error bit DQ5 or the Erase Timer bit DQ3. Outputs are valid when Chip Enable E and Output Enable G are ac- tive. The output is high impedance when the chip is deselected or the outputs are disabled. Chip Enable (E). The Chip Enable input acti- vates the memory control logic, input buffers, de- coders and sense amplifiers. E High deselects the memory and reduces the power consumption to the standby level. E can also be used to control writing to the command register and to the memo- ry array, while W remains at a low level. Table 2. Absolute Maximum Ratings (1) Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi- tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual- ity documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns. Table 3. User Bus Operations (1)) Note: 1. X = VIL or VIH. Table 4. Read Electronic Signature (following AS instruction or with A9 = VID) Symbol Parameter Value Unit TA Ambient Operating Temperature 0 to 70 °C TBIAS Temperature Under Bias –50 to 125 °C TSTG Storage Temperature –65 to 150 °C VIO (2) Input or Output Voltage –0.6 to 5 V VCC Supply Voltage –0.6 to 5 V V(A9, E, G) (2) A9, E, G Voltage –0.6 to 13.5 V Operation E G W ALE A0 A1 A6 A9 A12 A15 DQ15-DQ0 Non Linear Access Mode VIL VIL VIH Pulse X X X X X X Data Output Linear Access Cycle VIL Rising Edge VIH VIL X X X X X X Data Output Write Word VIL VIH VIL VIH A0 A1 A6 A9 A12 A15 Data Input Output Disable VIL VIH VIH VIH X X X X X X Hi-Z Standby VIH X X X X X X X X X Hi-Z Code E G W A0 A1 Other Address DQ15-DQ8 DQ7-DQ0 Manufact. Code VIL VIL VIH VIL VIL Don't Care 00h 20h Device Code VIL VIL VIH VIH VIL Don't Care 00h C1h |
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