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Electrical

Characteristics (Tc=25℃,unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V,ID=250uA

600

－

－

V

Breakdown Temperature Coefficient

ΔBVDSS

/ΔTJ

Reference to 25℃，

ID=250uA

－

0.6

－

V/℃

Zero Gate Voltage Drain Current

IDSS

VDS=600V,VGS=0V

－

－

1

μA

Gate-Body Leakage Current,Forward

IGSSF

VGS=30V,VDS=0V

－

－

1

μA

Gate-Body Leakage Current,Reverse

IGSSR

VGS=-30V,VDS=0V

－

－

-1

μA

On Characteristics

Gate-Source Threshold Voltage

VGS(th)

VDS=VGS,ID=250uA

2

－

4

V

Drain-Source On-State Resistance

RDS(on)

VGS=10V,ID=1A

－

2.2

2.5

Ω

Dynamic Characteristics

Input Capacitance

Ciss

VDS=50V,VGS=0V,

f=1.0MHZ

－

190

－

pF

Output Capacitance

Coss

－

13

－

pF

Reverse Transfer Capacitance

Crss

－

1.1

－

pF

Switching Characteristics

Turn-On Delay Time

td(on)

VDD=380V,ID=1A,

RG=50Ω

(Note4,5)

－

6

－

ns

Turn-On Rise Time

tr

－

3

－

ns

Turn-Off Delay Time

td(off)

－

65

－

ns

Turn-Off Fall Time

tf

－

11

－

ns

Total Gate Charge

Qg

VDS=480V,ID=2A,

VGS=10V, (Note4,5)

－

3.2

－

nC

Gate-Source Charge

Qgs

－

0.6

－

nC

Gate-Drain Charge

Qgd

－

1.2

－

nC

Drain-Source Body Diode Charcteristics and Maximum Ratings

Continuous Diode Forward

Current

IS

－

－

2

A

Pulsed Diode Forward Current

ISM

－

－

6

A

Diode Forward Voltage

VSD

IS=2A,VGS=0V

－

－

1.3

V

Reverse Recovery Time

trr

VGS=0V,IS=2A,

dIF/dt=100A/us, (Note4)

－

140

－

ns

Reverse Recovery Charge

Qrr

－

0.65

－

μC

Notes

1.

Repetitive Rating:pulse width limited by maximum junction temperature.

2.

VDD=50V,L=22.5mH,Rg=25Ω,IAS=2A ,starling TJ=25℃.

3.

ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃.

4.

Pulse width≤300us;duty cycle≤2%.

5.

Repetitive rating; pulse width limited by maximum junction temperature.