2N60FS datasheet(1/9 Pages) CHONGQING

Part #	2N60FS

Description	2 Amps,600 Volts N-Channel Super Junction Power MOSFET

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Manufacturer	CHONGQING [Chongqing Pingwei Enterprise co.,Ltd]

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2N60(F,B,H,G,D)S

2 Amps,600 Volts N-Channel Super Junction Power MOSFET

FEATURE



2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A



Low gate charge



Low Ciss



Fast switching



100% avalanche tested



Improved dv/dt capability

TO-220AB

ITO-220AB

TO-262

2N60S

2N60FS

2N60HS

TO-263

TO-252

TO-251

2N60BS

2N60GS

2N60DS

Absolute Maximum Ratings(TC=25℃,unless otherwise noted)

Parameter

Symbol

2N60(F,B,H,G,D)S

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

Continuous Drain Current

ID

2

A

Pulsed Drain Current(Note1)

IDM

6

Single Pulse Avalanche Energy (Note 2)

EAS

45

mJ

Avalanche Current(Note1)

IAR

1

A

Repetitive Avalanche Energy (Note1)

EAR

0.06

mJ

Reverse Diode dV/dt (Note 3)

dv/dt

15

V/ns

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

℃

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

TL

260

℃

Mounting Torque

6-32 or M3 screw

10

lbf·in

1.1

N·m

Thermal

Characteristics

Parameter

Symbol

ITO-220

TO-220/TO-262/

TO-263

TO-251/TO-252

Units

Thermal resistance , Junction to Case

Rth(J-c)

7.8

5.4

℃/W

Thermal resistance , Channel to Case

Rth(ch-c)

7.8

5.4

℃/W

Thermal resistance , Channel to Ambient

Rth(ch-a)

80

62

℃/W

Maximum Power Dissipation

TC=25℃

PD

16

23

W

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2N60FS Datasheet(PDF) 1 Page - Chongqing Pingwei Enterprise co.,Ltd

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