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AL2007LA Datasheet(PDF) 13 Page - Samsung semiconductor

Part # AL2007LA
Description  Phase-Locked Loop (PLL) frequency synthesizer constructed in CMOS on single monolithic structure
PDF  16 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

AL2007LA Datasheet(HTML) 13 Page - Samsung semiconductor

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0.35
µµµµm 20MHZ-170MHZ FSPLL
AL2007LA
13
DESIGN CONSIDERATIONS
The following design consideratios apply:
•
Phase tolerance and jitter are independent of the PLL frequency.
•
Jitter is affected by the noise frequency in the power(VDD/VSS,VDDA/VSSA). It increases when the noise
level increases.
•
A CMOS-level input reference clock is recommend for signal compatibility with the PLL circuit. Other levels
such as TTL may degrade the tolerances.
•
The use of two, or more PLLs requires special design considerations. Please consult your application engineer
for more information.
•
The following apply to the noise level, which can be minimized by using good analog power and ground
isolation techniques in the system:
- Use wide PCB traces for POWER(VDD/VSS, VDDA/VSSA) connections to the PLL core.
Seperate the traces from the chip's VDD/VSS,VDDA/VSSA supplies.
- Use proper VDD/VSS,VDDA/VSSA de-coupling.
- Use good power and ground sources on the board.
- Use Power VBB for minimize substrate noise
•
The PLL core should be placed as close as possible to the dedicated loop filter and analog Power and ground
pins.
•
It is inadvisable to locate noise-generating signals, such as data buses and high-current outputs, near the PLL
I/O cells.
•
Other related I/O signals should be placed near the PLL I/O but do not have any pre-defined placement
restriction



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