HAT2201R datasheet(4/8 Pages) RENESAS

4 / 8 page

HAT2201R

Rev.3.00, Apr.07.2004, page 4 of 7

Case Temperature

(°C)

Static Drain to Source on State Resistance

vs. Temperature

100

-25

100

125 150

1 A, 2 A, 5 A

ID = 1 A, 2 A, 5 A

VGS = 8 V

10 V

Pulse Test

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

330

0.1

100

0.3

100

0.1

Tc = –25°C

VDS = 10 V

Pulse Test

75°C

25°C

Reverse Drain Current

IDR

(A)

Body–Drain Diode Reverse

Recovery Time

100

0.1

di/dt = 100 A/

µs

VGS = 0, Ta = 25°C

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

010

10000

3000

1000

300

100

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

Gate Charge

Qg (nC)

Dynamic Input Characteristics

250

200

150

100

816

ID = 6 A

VGS

VDS

VDS = 100 V

50 V

25 V

VDS = 100 V

50 V

25 V

Drain Current

ID (A)

Switching Characteristics

100

0.1

1000

VGS = 10 V, VDS = 30 V

Rg = 4.7

Ω, duty < 1 %

td(on)

td(off)

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