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SERCON410B Datasheet(PDF) 20 Page - STMicroelectronics |
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SERCON410B Datasheet(HTML) 20 Page - STMicroelectronics |
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20 / 34 page  Figure 12. Write Access to DUAL Port RAM AC ELECTRICAL CHARACTERISTICS (Continued) Symbol Parameter Value Unit Min. Type Max. tASU Setup time A10-0, BHEN, MCSN0-1, WRN (only Motorola mode) to falling edge of WRN (Intel mode) or RDN (Motorola mode with low active strobe) or rising edge RDN (Motorola mode with high active strobe) 0ns tAHD Hold time A10-0, BHEN, MCSN0-1, WRN (only Motorola mode) to rising edge of WRN (Intel mode) or RDN (Motorola mode with low active strobe) or rising edge RDN (Motorola mode with high active strobe) 0ns tMWRW Pulse width WRN or RDN 30 ns tDSU Setup time D15-0 to end of write access 10 ns tDHD Hold time D15-0 after end of write access 10 ns tMBSY Delay WRN or RDN (begin of write access) to BUSYN low 35 ns tMBHWH Setup time BUSYN high to end of write access 30 ns tWR1 WRN and RDN high after end of write access 40 ns 3.4.8 Write Access to Dual Port RAM ® SERCON410B 16/30 |
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