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STB20NE06 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB20NE06 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STB20NE06 N - CHANNEL 60V - 0.06 Ω - 20A D2PAK STripFET ™ POWER MOSFET s TYPICAL RDS(on) = 0.06 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s APPLICATION ORIENTED CHARACTERIZATION s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size ™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ® INTERNAL SCHEMATIC DIAGRAM June 1999 1 3 D 2PAK TO-263 (suffix ”T4”) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it VDS Drain-source Voltage (VGS =0) 60 V VDGR Drain- gate Voltage (RGS =20 k Ω)60 V VGS G ate-source Volt age ± 20 V ID Drain Current (continuous) at Tc =25 oC20 A ID Drain Current (continuous) at Tc =100 oC14 A IDM ( •) Drain Current (pulsed) 80 A Ptot T otal Dissipat ion at Tc =25 oC70 W Derating Factor 0.47 W / o C dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STB20NE06 60 V < 0.080 Ω 20 A 1/8 |
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