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RT3XAAM Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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RT3XAAM Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 4 page  RT3XAAM Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION RT3XAAM is a composite transistor with built-in bias resistor FEATURE ●Built-in bias resistor ( R1=4.7 KΩ) ●Mini package for easy mounting APPLICATION muting circuit、switching circuit OUTLINE DRAWING Unit：mm MARKING . A XA １ 2 3 6 5 4 . . A XA １ 2 3 6 5 4 . MAXIMUM RATINGS （Ta=25℃）（RTr1、RTr2） Symbol Parameter Ratings Unit V CBO Collector to Base voltage 40 V V EBO Emitter to Base voltage 40 V V CEO Collector to Emitter voltage 20 V I C Collector current 400 mA P C Collector dissipation（Total Ta=25℃） 150 mW T j Junction temperature ＋150 ℃ T stg Storage temperature -55～＋150 ℃ ISAHAYA ELECTRONICS CORPORATION TERMINAL CONNECTOR ①： EMITTER1 ②： BASE1 ③： COLLECTOR2 ④： EMITTER2 ⑤： BASE2 ⑥ :COLLECTOR1 JEITA：SC-88 1.25 2.1 ① ② ③ ⑤ ④ ⑥ R1 RTr1 ① ② ④ ⑤ R2 RTr2 ③ R1 ⑥ |
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