STC08IE150HV datasheet(4/11 Pages) STMICROELECTRONICS

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Electrical characteristics

STC08IE150HV

4/11

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICS(SS)

Collector-source cut-off

current (VBS =VGS =0)

VCS =1500 V

100

µA

IBS(OS)

Base-source cut-off

current (IC =0, VGS =0)

VBS =30 V

µA

ISB(OS)

Source-base cut-off

current (IC =0, VGS =0)

VSB =17 V

100

µA

IGS(OS)

Gate-source cut-off

current (IC=0; VBS =0)

VGS = ± 17 V

100

VCS(ON)

Collector-source on

voltage

VGS =10 V IC =3 A IB =0.3 A

VGS =10 V IC =8 A IB =1.6 A

0.3

0.65

1.2

1.5

hFE

DC current gain

VGS =10 V VCS =1 V IC =3 A

VGS =10 V VCS =1 V IC =8 A

4.5

6.8

VBS(ON)

Base-source on voltage

VGS =10 V IC =3 A IB =0.3 A

VGS =10 V IC =8 A IB =1.6 A

1.7

1.5

VGS(th)

Gate threshold voltage

VBS =VGS

IB =250 µA

Ciss

Input capacitance

VCS =25 V

f =1 MHz

VGS=VCB=0

810

QGS(tot)

Gate-source charge

VCS=25 V

VGS=10 V

VCB=0

IC =4 A

Inductive load

Storage time

Fall time

VGS =10 V

RG =4.7 Ω

Vclamp =1200V

tp =4 µs

IC =4 A

IB =0.8 A

690

Inductive load

Storage time

Fall time

VGS =10 V

RG =4.7 Ω

Vclamp =1200 V

tp =4 µs

IC =4 A

IB =0.4 A

340

VCS(dyn)

Collector-source

dynamic voltage

(500 ns)

VCC =Vclamp =600 V

VGS =10 V

IC =2 A

IB = 0.4 A

RG =4.7 Ω

t(peak) =500 ns

IB(peak) =4 A

2.8

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