STGD8NC60KD datasheet(4/18 Pages) STMICROELECTRONICS

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Electrical characteristics

STGB8NC60KD - STGD8NC60KD - STGF8NC60KD - STGP8NC60KD

4/18

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE= 0)

IC= 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15 V, IC = 3 A

VGE= 15 V, IC = 3 A, TC = 125°C

2.2

1.8

2.75

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

4.5

6.5

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, TC = 125 °C

150

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20 V

±100

gfs

(1)

Pulse duration = 300 us, duty cycle 1.5 %

Forward transconductance

VCE = 15 V, IC= 3 A

1.9

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

380

8.5

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390 V, IC = 3 A,

VGE = 15 V,

(see Figure 20)

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 3 A

RG= 10 Ω, VGE= 15 V

(see Figure 21)

655

A/µs

td(on)

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC =3 A

RG= 10 Ω, VGE= 15 V,

TC = 125 °C

(see Figure 21)

16.5

6.5

575

A/µs

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