STP6NB80 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

TO-220

TO220-FP

Rthj-case

Thermal Resistance Junction-case

Max

1.0

3.1

oC/W

Rthj-amb

Rthc-sink

T l

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

T yp

Maximum Lead T emperature For Soldering Purpose

62.5

0.5

300

oC/W

AVALANCHE CHARACTERISTICS

Symbo l

Parameter

Max Value

Unit

IAR

Avalanche Current , Repet itive or Not -Repetit ive

(pulse widt h limited by Tj max)

5.7

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =50 V)

314

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS =0

800

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc = 125

µA

IGSS

Gat e-body Leakage

Current (VDS =0)

VGS =

± 30 V

± 100

ON (

∗)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

VGS(th)

Gat e Threshold Voltage VDS =VGS ID = 250

µA

345

RDS(on)

Static Drain-source On

Resist ance

VGS =10V

ID =3 A

1.6

1. 9

Ω

ID(o n)

On State Drain Current

VDS >ID(o n) xRDS(on )max

VGS =10 V

5. 7

DYNAMIC

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS >ID(o n) xRDS(on )max

ID =3 A

2. 5

4.5

Ciss

Coss

Crss

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

1250

145

1625

190

STP6NB80/FP

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