BUF410A datasheet(4/9 Pages) STMICROELECTRONICS

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Electrical characteristics

BUF410A

4/9

Inductive load

Storage time

Fall time

Cross over time

IC = 5 A

VCC = 50 V

VBB = -5 V

RBB = 1.2 Ω

VClamp = 400 V

IB1 = 0.5 A

L = 0.5 mH

TC = 100 °C

1.8

0.1

0.18

µs

VCEW

Maximum collector

emitter voltage

without snubber

IC = 5 A

VCC = 50 V

VBB = -5 V

RBB = 1.2 Ω

IB1 = 0.5 A

L = 0.5 mH

TC = 125 °C

500

Inductive load

Storage time

Fall time

Cross over time

IC = 5 A

VCC = 50 V

VBB = 0

RBB = 0.3 Ω

VClamp = 400 V

IB1 = 0.5 A

L = 0.5 mH

1.5

0.04

0.07

µs

Inductive load

Storage time

Fall time

Cross over time

IC = 5 A

VCC = 50 V

VBB = 0

RBB = 0.3 Ω

VClamp = 400 V

IB1 = 0.5 A

L = 0.5 mH

TC = 100 °C

0.15

0.25

µs

VCEW

Maximum collector

emitter voltage

without snubber

IC = 5 A

VCC = 50 V

VBB = 0

RBB = 0.3 Ω

IB1 = 0.5 A

L = 0.5 mH

TC = 125 °C

500

Inductive load

Storage time

Fall time

Cross over time

IC = 10 A

VCC = 50 V

VBB = -5 V

RBB = 1.2 Ω

VClamp = 400 V

IB1 = 2 A

L = 0.25 mH

1.9

0.06

0.12

µs

Inductive load

Storage time

Fall time

Cross over time

IC = 10 A

VCC = 50 V

VBB = -5 V

RBB = 1.2 Ω

VClamp = 400 V

IB1 = 2 A

L = 0.25 mH

TC = 100 °C

3.2

0.12

0.3

µs

VCEW

Maximum collector

emitter voltage

without snubber

IC = 15 A

VCC = 50 V

VBB = -5 V

RBB = 1.2 Ω

IB1 = 3 A

L = 0.1 mH

TC = 125 °C

400

Pulse duration = 300 µs, duty cycle

≤ 1.5%

Table 4.

Electrical characteristics (continued)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

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