STS3DPF20V datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STS3DPF20V

Description	DUAL P-CHANNEL 20V - 0.090 ohm - 3A SO-8 STripFET™ POWER MOSFET

PDF	8 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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June 2002

.

STS3DPF20V

DUAL P-CHANNEL 20V - 0.090

Ω - 3A SO-8

STripFET™ POWER MOSFET

s

TYPICAL RDS(on) = 0.090 Ω @ 4.5 V

s

TYPICAL RDS(on) = 0.1 Ω @ 2.7 V

s

STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s

ULTRA LOW THRESHOLD

GATE DRIVE (2.7 V)

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s

MOBILE PHONE APPLICATIONS

TYPE

VDSS

RDS(on)

ID

STS3DPF20L

20 V

<0.11

Ω

3 A

SO-8

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

20

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

20

V

VGS

Gate- source Voltage

± 12

V

ID

Drain Current (continuous) at TC = 25°C Single Operation

Drain Current (continuous) at TC = 100°C Single Operation

3

1.9

A

IDM(•)

Drain Current (pulsed)

12

A

Ptot

Total Dissipation at TC = 25°C Dual Operation

Total Dissipation at TC = 25°C Single Operation

1.6

2

W

INTERNAL SCHEMATIC DIAGRAM

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STS3DPF20V Datasheet(PDF) 1 Page - STMicroelectronics

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