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STS2DPF20V Datasheet (PDF) - STMicroelectronics
STS2DPF20V Datasheet PDF - STMicroelectronics
Part # STS2DPF20V
Download  STS2DPF20V Download
File Size   117.15 Kbytes
Page   6 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET

STS2DPF20V Datasheet (PDF)

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STS2DPF20V Datasheet PDF - STMicroelectronics

Part # STS2DPF20V
Download  STS2DPF20V Click to download

File Size   117.15 Kbytes
Page   6 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET

STS2DPF20V Datasheet (HTML) - STMicroelectronics


STS2DPF20V Product details

DESCRIPTION
This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.14Ω (@4.5V)
■ TYPICAL RDS(on) = 0.2Ω (@2.7V)
■ ULTRA LOW THRESHOLD GATE DRIVE (2.7V)
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

APPLICATIONS
■ BATTERY MANAGMENT IN NOMADIC EQUIPMENT
■ POWER MANAGMENT IN CELLULAR PHONES




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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