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PRELIMINARY DATA

August 2001

STS2DPF20V

DUAL P-CHANNEL 20V - 0.14

Ω - 2A SO-8

2.7V-DRIVE STripFET™ II POWER MOSFET

Note: For the P-CHANNEL MOSFET actual polarity of Voltages

and current has to be reversed

s

s

s

ULTRA LOW THRESHOLD GATE DRIVE (2.7V)

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STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This Power MOSFET is the second generation of

STMicroelectronics unique “Single Feature Size™”

strip-based process. The resulting transistor shows

extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remarkable

manufacturing reproducibility.

APPLICATIONS

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BATTERY MANAGMENT IN NOMADIC

EQUIPMENT

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POWER MANAGMENT IN CELLULAR PHONES

MOSFET ABSOLUTE MAXIMUM RATINGS

TYPE

STS2DPF20V

20 V

<0.20

Ω (@4.5V)

<0.25

Ω (@2.7V)

2 A

Symbol

Parameter

Value

Unit

20

V

20

V

Gate- source Voltage

± 12

V

2

1.26

A

A

Drain Current (pulsed)

8

A

1.6

2

W

W

SO-8

INTERNAL SCHEMATIC DIAGRAM