STS2DPF20V datasheet(2/6 Pages) STMICROELECTRONICS

Part #	STS2DPF20V

Description	DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 6 page

STS2DPF20V

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THERMAL DATA

MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-amb

(*)Thermal Resistance Junction-ambient Single Operation

Dual Operation

62.5

°C/W

Tstg

Storage Temperature

-55 to 150

°C

Junction-ambient Temperature

-55 to 150

°C

(*) When Mounted on 0.5 in² of 2 oz. Copper

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 12 V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

0.6

RDS(on)

Static Drain-source On

Resistance

VGS = 4.5 V, ID = 1 A

0.14

0.20

Ω

VGS = 2.7 V, ID = 1 A

0.20

0.25

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS = 15 V, ID = 1.5 A

4.5

Ciss

Input Capacitance

VDS = 15V, f = 1 MHz, VGS = 0

315

Coss

Output Capacitance

Crss

Reverse Transfer

Capacitance

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