M3062JFHTFP datasheet(85/101 Pages) RENESAS

85 / 101 page

M16C/62P Group (M16C/62P, M16C/62PT)

5. Electrical Characteristics

Rev.2.41

Jan 10, 2006

Page 85 of 96

REJ03B0001-0241

NOTES:

Referenced to VCC1=4.5 to 5.5V at Topr = 0 to 60

°C unless otherwise specified.

n denotes the number of block erases.

Program and Erase Endurance refers to the number of times a block erase can be performed.

If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.

For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as

one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.

(Rewrite prohibited)

Maximum number of E/W cycles for which operation is guaranteed.

Ta (ambient temperature)=55

°C. As to the data hold time except Ta=55 °C, please contact Renesas Technology Corp. or an

authorized Renesas Technology Corp. product distributor.

Referenced to VCC1 = 4.5 to 5.5V at Topr =

−40 to 85 °C (B7, U7 (T version)) / −40 to 125 °C (B7, U7 (V version)) unless

otherwise specified.

Table 5.54 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.53.

To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to

unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For

example, an 8-word program can be written 256 times maximum before erase becomes necessary.

Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the

total number of times erasure is used.

Should erase error occur during block erase, attempt to execute clear status register command, then block erase command

at least three times until erase error disappears.

10. Set the PM17 bit in the PM1 register to “1” (wait state) when executing more than 100 times rewrites (B7 and U7).

11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.

Table 5.53

Flash Memory Version Electrical Characteristics (1) for 100 cycle products (B, U)

Symbol

Parameter

Standard

Unit

Min.

Typ.

Max.

−

Program and Erase Endurance (3)

100

cycle

−

Word Program Time (VCC1=5.0V

)

200

µs

−

Lock Bit Program Time

200

µs

−

Block Erase Time

(VCC1=5.0V

)

4-Kbyte block

0.3

−

8-Kbyte block

0.3

−

32-Kbyte block

0.5

−

64-Kbyte block

0.8

−

Erase All Unlocked Blocks Time (2)

4×n

tPS

Flash Memory Circuit Stabilization Wait Time

µs

−

Data Hold Time (5)

year

Table 5.54

Flash Memory Version Electrical Characteristics (6) for 10,000 cycle products (B7, U7)

(Block A and Block 1 (7))

Symbol

Parameter

Standard

Unit

Min.

Typ.

Max.

−

Program and Erase Endurance (3, 8, 9)

10,000 (4)

cycle

−

Word Program Time (VCC1=5.0V

)

µs

−

Lock Bit Program Time

µs

−

Block Erase Time

(VCC1=5.0V

)

4-Kbyte block

0.3

tPS

Flash Memory Circuit Stabilization Wait Time

µs

−

Data Hold Time (5)

year

Table 5.55

Flash Memory Version Program/Erase Voltage and Read Operation Voltage

Characteristics (at Topr = 0 to 60

°C(B, U), Topr = −40 to 85 °C (B7, U7 (T version)) / −40

to 125

°C (B7, U7 (V version))

Flash Program, Erase Voltage

Flash Read Operation Voltage

VCC1 = 5.0 V ± 0.5 V

VCC1=4.0 to 5.5 V

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