HSB88WS datasheet(2/5 Pages) RENESAS

Part #	HSB88WS

Description	Silicon Schottky Barrier Diode for Balanced Mixer

PDF	5 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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2 / 5 page

HSB88WS

Rev.4.00 Apr 05, 2005 page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Reverse voltage

Average rectified current

IO *

Power dissipation

Pd *

150

Junction temperature

125

°C

Operation temperature

Topr

−40 to +85

°C

Storage temperature

Tstg

−55 to +125

°C

Note:

1. 4 devices total

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

VF1

0.365

—

0.435

IF = 1 mA

Forward voltage

VF2

0.520

—

0.600

IF = 10 mA

IR1

—

0.2

VR = 2 V

Reverse current

IR2

—

µA

VR = 10 V

Capacitance

—

0.85

VR = 0 V, f = 1 MHz

Capacitance deviation

∆C *1

—

0.2

VR = 0 V, f = 1 MHz

Forward voltage deviation

∆V

F *

—

IF = 10 mA

ESD-Capabilityme *

—

C = 200 pF, R = 0

Ω, Both forward

and reverse direction 1 pulse.

Notes

: 1. Deviation between 4 devices in one package.

2. Failure criterion ; IR > 0.4 µA at VR = 2 V

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