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2SH28 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SH28
Description  Silicon N Channel IGBT High Speed Power Switching
PDF  10 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SH28 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SH28
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Collector to Emitter voltage
V
CES
600
V
Gate to Emitter voltage
V
GES
±20
V
Collector current
I
C
20
A
Collector peak current
ic(peak)
40
A
Collector dissipation
P
C
Note1
60
W
Channel temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector
current
I
CES
—
—
100
µAV
CE = 600V, VGE = 0
Gate to emitter leak current
I
GES
——
±1
µAV
GE = ± 20 V, VCE = 0
Gate to emitter cutoff voltage
V
GE(off)
6.0
—
8.0
V
I
C = 20 mA, VCE = 10V
Collector to emitter saturation
voltage
V
CE(sat)
—
2.1
2.6
V
I
C = 20 A, VGE = 15V
Input capacitance
Cies
—
1200
—
pF
V
CE = 10V,
V
GE = 0
f = 1MHz
Switching time
t
r
—
150
—
ns
I
C = 20 A
t
on
—
230
—
ns
R
L = 15 Ω
t
f
—
300
600
ns
V
GS = ±15V
t
off
—
450
900
ns
Rg = 50
Ω



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