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HTT1213E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HTT1213E Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 4 page ![]() Rev.1.00, Feb.07.2005, page 1 of 3 HTT1213E Silicon NPN Epitaxial Twin Transistor REJ03G0526-0100 (Previous ADE-208-1449(Z)) Rev.1.00 Feb.07.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer Transistor Q2: Equivalent OSC Transistor 2SC5700 2SC5700 Outline 1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1 65 4 3 2 1 B1 E2 B2 C1 E1 C2 Pin Arrangement Q1 Q2 PXSF0006LA-A (Previous code: EMFPAK-6) 1 2 3 4 5 6 Note: Marking is “E”. Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol Q1 and Q2 Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 4 V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC Total 200* mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C *Value on PCB. (FR–4(13 x 13 x 0.635 mm)) |
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