Document Number: 91132

www.vishay.com

S-Pending-Rev. A, 23-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFD224, SiHFD224

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertiable

case style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serveres as a

thermal link to the mounting surface for power dissipation

levels up to 1 W.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

250

1.1

14

2.7

7.8

Configuration

Single

N-Channel MOSFET

G

D

S

HEXDIP

D

S

G

RoHS

COMPLIANT

ORDERING INFORMATION

Package

HEXDIP

Lead (Pb)-free

IRFD224PbF

SiHFD224-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

250

V

Gate-Source Voltage

± 20

Continuous Drain Current

0.63

A

0.40

5.0

Linear Derating Factor

0.0083

W/°C

60

mJ

0.63

A

0.10

mJ

Maximum Power Dissipation

1.0

W

dV/dt

4.8

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s