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TCET1102G Datasheet(PDF) 4 Page - Vishay Siliconix

Part # TCET1102G
Description  Optocoupler, Phototransistor Output, High Temperarure
PDF  10 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TCET1102G Datasheet(HTML) 4 Page - Vishay Siliconix

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Document Number: 83503
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 2.2, 16-May-08
813
TCET1100/TCET1100G
Optocoupler, Phototransistor Output,
High Temperarure
Vishay Semiconductors
Note
According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
IC/IF
VCE = 5 V, IF = 1 mA
TCET1101
TCET1101G
CTR
13
30
%
TCET1102
TCET1102G
CTR
22
45
%
TCET1103
TCET1103G
CTR
34
70
%
TCET1104
TCET1104G
CTR
56
90
%
VCE = 5 V, IF = 5 mA
TCET1100
TCET1100G
CTR
50
600
%
TCET1105
TCET1105G
CTR
50
150
%
TCET1106
TCET1106G
CTR
100
300
%
TCET1107
TCET1107G
CTR
80
160
%
TCET1108
TCET1108G
CTR
130
260
%
TCET1109
TCET1109G
CTR
200
400
%
VCE = 5 V, IF = 10 mA
TCET1101
TCET1101G
CTR
40
80
%
TCET1102
TCET1102G
CTR
63
125
%
TCET1103
TCET1103G
CTR
100
200
%
TCET1104
TCET1104G
CTR
160
320
%
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
IF
130
mA
OUTPUT
Power dissipation
Pdiss
265
mW
COUPLER
Rated impulse voltage
VIOTM
8kV
Safety temperature
Tsi
150
°C
INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
8kV
Vpd
1.3
kV
Insulation resistance
VIO = 500 V
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω



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