3

0299H–PEEPR–10/06

AT28BV64B

3.

Block Diagram

4.

Device Operation

4.1

Read

The AT28BV64B is accessed like a static RAM. When CE and OE are low and WE is high, the

data stored at the memory location determined by the address pins is asserted on the outputs.

The outputs are put in the high impedance state when either CE or OE is high. This dual-line

control gives designers flexibility in preventing bus contention in their systems.

4.2

Byte Write

A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a

write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last.

The data is latched by the first rising edge of CE or WE. Once a byte write has been started, it

will automatically time itself to completion. Once a programming operation has been initiated

and for the duration of t

4.3

Page Write

The page write operation of the AT28BV64B allows 1 to 64 bytes of data to be written into the

device during a single internal programming period. A page write operation is initiated in the

same manner as a byte write; the first byte written can then be followed by 1 to 63 additional

bytes. Each successive byte must be written within 100 µs (t

t

programming operation. All bytes during a page write operation must reside on the same page

as defined by the state of the A6 to A12 inputs. For each WE high to low transition during the

page write operation, A6 to A12 must be the same.

The A0 to A5 inputs specify which bytes within the page are to be written. The bytes may be

loaded in any order and may be altered within the same load period. Only bytes which are

specified for writing will be written; unnecessary cycling of other bytes within the page does

not occur.