VND5N07 datasheet(4/15 Pages) STMICROELECTRONICS

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VND5N07/VND5N07-1/VNP5N07FI/K5N07FM

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ELECTRICAL CHARACTERISTICS (cont’d)

Table 9. Source Drain Diode

Note: 4. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

5. Parameters guaranteed by design/characterization.

Table 10. Protection

Note: 6. Parameters guaranteed by design/characterization.

PROTECTION FEATURES

During

normal

operation,

the

Input

electrically connected to the gate of the internal

power MOSFET. The device then behaves like a

standard power MOSFET and can be used as a

switch from DC to 50 KHz. The only difference

from the user’s standpoint is that a small DC

current (Iiss) flows into the Input pin in order to

supply the internal circuitry.

The device integrates:

– OVERVOLTAGE

CLAMP

PROTECTION:

internally set at 70V, along with the rugged

avalanche

characteristics

the

Power

MOSFET stage give this device unrivalled

ruggedness and energy handling capability.

This feature is mainly important when driving

inductive loads.

– LINEAR CURRENT LIMITER CIRCUIT: limits

the drain current Id to Ilim whatever the Input pin

voltage. When the current limiter is active, the

device operates in the linear region, so power

dissipation may exceed the capability of the

heatsink. Both case and junction temperatures

increase, and if this phase lasts long enough,

junction

temperature

may

reach

the

overtemperature threshold Tjsh.

– OVERTEMPERATURE AND SHORT CIRCUIT

PROTECTION: these are based on sensing the

chip temperature and are not dependent on the

input voltage. The location of the sensing

element on the chip in the power stage area

ensures fast, accurate detection of the junction

temperature. Overtemperature cutout occurs at

minimum 150°C. The device is automatically

restarted when the chip temperature falls below

135°C.

– STATUS FEEDBACK: In the case of an

overtemperature

fault

condition,

Status

Feedback is provided through the Input pin. The

internal protection circuit disconnects the input

from the gate and connects it instead to ground

via an equivalent resistance of 100

Ω. The

failure can be detected by monitoring the

voltage at the Input pin, which will be close to

ground potential.

Additional features of this device are ESD

protection according to the Human Body model

and the ability to be driven from a TTL Logic circuit

(with a small increase in RDS(on)).

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VSD

(4)

Forward On Voltage

ISD = 2.5 A; Vin = 0

1.6

trr

(5)

Reverse Recovery Time

ISD = 2.5 A; di/dt = 100 A/µs

VDD = 30 V; Tj = 25 °C

(see test circuit, Figure 30)

150

Qrr

(5)

Reverse Recovery Charge

0.3

µC

IRRM

(5)

Reverse Recovery Current

5.7

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Ilim

Drain Current Limit

Vin = 10 V; VDS = 13 V

Vin = 5 V; VDS = 13 V

3.5

tdlim

(6)

Step Response Current Limit

Vin = 10 V

Vin = 5 V

µs

Tjsh

(6)

Overtemperature Shutdown

150

°C

Tjrs

(6)

Overtemperature Reset

135

°C

Igf

(6)

Fault Sink Current

Vin = 10 V; VDS = 13 V

Vin = 5 V; VDS = 13 V

Eas

(6)

Single Pulse

Avalanche Energy

starting Tj = 25 °C; VDD = 20 V

Vin = 10 V; Rgen = 1 KΩ; L = 10 mH

0.2

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