SC820

3

Exceeding the above specifications may result in permanent damage to the device or device malfunction. Operation outside of the parameters

specified in the Electrical Characteristics section is not recommended.

NOTES:

(1)

Tested according to JEDEC standard JESD22-A114-B.

(2)

Calculated from package in still air, mounted to 3 x 4.5 (in), 4 layer FR4 PCB with thermal vias under the exposed pad per JESD51 standards.

Absolute Maximum Ratings

VAD and VUSB (V) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +30.0

BAT, IPRGM, IPUSB (V) . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6.5

STATB, EN (V) . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to V

BAT

+0.3

VAD Input Current (A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 . 5

VUSB Input Current (A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 . 5

BAT, IPRGM, IPUSB Short-to-GND Duration . . . . . Continuous

Total Power Dissipation (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Recommended Operating Conditions

Operating Ambient Temperature (°C) . . . . . . . . . -40 to +85

Thermal Information

Junction Temperature Range (°C) . . . . . . . . . . . . . . . . . . +150

Storage Temperature Range (°C) . . . . . . . . . . . . -65 to +150

Peak IR Reflow Temperature (10s to 30s) (°C) . . . . . . . +260

Test Conditions: V

VAD

= V

VUSB

= 4.75V to 5.25V; V

BAT

= 3.7V; Typ values at 25°C; Min and Max at -40°C < T

A

< 85°C, unless specified.

Parameter

Symbol

Conditions

Min

Typ

Max

Units

V

AD-OP

4.60

5.00

8.20

V

VAD Select Rising Threshold

VT

ADsel-R

4.30

4.45

4.60

V

VT

ADsel-F

V

VAD

> V

BAT

2.70

2.85

3.00

V

V

USB-OP

4.35

5.00

8.20

V

VUSB Select Rising Threshold

VT

USBsel-R

V

VUSB

> V

BAT

4.20

4.35

V

VUSB Deselect Falling Threshold

VT

USBsel-F

V

VUSB

> V

BAT

3.65

4.00

V

VUSB Select Hysteresis

VT

USBsel-H

VT

USBsel-R

- VT

USBsel-F

100

mV

OVP Rising Threshold

VT

OVP-R

VAD or VUSB input

9.6

V

OVP Falling Threshold

VT

OVP-F

VAD or VUSB input

8.2

V

OVP Hysteresis

VT

OVP-H

(VT

OVP-R

- VT

OVP-F

)50

mV

VAD Charging Disabled Quiescent

Current

Iq

VAD_DIS

V

VUSB

= 0V, V

ENB

= V

BAT

23

mA

VAD Charging Enabled Quiescent

Current

Iq

VAD_EN

V

VUSB

= 0V, V

ENB

= 0V,

excluding I

BAT

, I

IPRGM

, and I

IPUSB

23

mA

VUSB Charging Disabled Quiescent

Current

Iq

VUSB_DIS

V

VAD

= 0V; V

ENB

= V

BAT

23

mA

VUSB Charging Enabled Quiescent

Current

Iq

VUSB_EN

V

VAD

= 0V, V

ENB

= 0V,

excluding I

BAT

, I

IPRGM

, and I

IPUSB

23

mA

Electrical Characteristics