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MMBT5550 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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MMBT5550 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page ![]() SMD Type Transistors 1 www.kexin.com.cn 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 High Voltage Transistors MMBT5550 Features NPN Silicon Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO 140 V Collector-base voltage VCBO 160 V Emitter-base voltage VEBO 6V Collector current -continuous IC 600 mA Total device dissipation FR-5 board *1 @TA = 25 PD 225 mW Derate above 25 1.8 mW/ Thermal resistance, junction-to-ambient RèJA 556 /W Total device dissipation alumina substrate *2 @TA = 25 PD 300 mW derate above 25 2.4 mW/ Thermal resistance, junction-to-ambient RèJA 417 /W Junction and storage temperature TJ,Tstg -55to+150 * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. |
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