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2SD1621 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1621 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page ![]() SMD Type Transistors 1 www.kexin.com.cn NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6V Collector current IC 2A Collector current (pulse) ICP 5A PC 500 mW PC* 1.3 W Junction temperature Tj 150 Storage temperature Tstg -55to+150 * Mounted on ceramic board(250mm2X0.8mm) Collector dissipation |
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