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2SD1621 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1621 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() 2 SMD Type Transistors www.kexin.com.cn 2SD1621 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB =20V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB =4V, IC=0 0.1 ìA DC current gain hFE VCE =2V , IC = 100 mA 100 560 Gain bandwidth product fT VCE =10V , IC = 50 mA 150 MHz Output capacitance Cob VCB = 10 V , f = 1.0MHz 19 pF Collector-emitter saturation voltage VCE(sat) IC =1.5 A , IB = 75 mA 0.18 0.4 V Base-emitter saturation voltage VBE(sat) IC =1.5 A , IB = 75 mA 0.85 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE =0 30 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA , RBE = 25 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC =0 6 V Turn-on timie ton 60 ns Storage time tstg 500 ns Turn-off time tf 25 ns hFE Classification Marking Rank R S T U hFE 100 200 140 280 200 400 280 560 DD |
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