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BUV27F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUV27F
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUV27F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUV27F Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUV27F Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUV27F/AF
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 120V(Min)- BUV27F
150V(Min)- BUV27AF
·High Switching Speed
APPLICATIONS
·Designed for fast switching applications such as high
frequency and efficiency converters, switching regulators
and motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUV27F
240
VCES
Collector-Emitter Voltage
VBE= 0
BUV27AF
300
V
BUV27F
120
VCEO
Collector-Emitter Voltage
BUV27AF
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
B
Base Current-Continuous
4
A
IBM
Base Current-Peak
6
A
PC
Collector Power Dissipation
@ TC=25℃
18
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
7.0
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
55
℃/W
isc Website：www.iscsemi.cn


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