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STM8320 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STM8320
Description  Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PDF  11 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8320 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±10
uA
VGS(th)
1
V
18
gFS
14
S
VSD
CISS
420
pF
COSS
130
pF
CRSS
78
pF
Qg
8
nC
11
nC
Qgs
40
nC
Qgd
15
tD(ON)
7.9
ns
tr
1.2
ns
tD(OFF)
2.5
ns
tf
ns
Gate-Drain Charge
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=15V,ID=7.5A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=7.5A
VDS=10V , ID=4.0A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
N-Channel ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=6.5A
23
26
35
m ohm
c
f=1.0MHz
c
VDS=15V,ID=7.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=1.3A
0.78
1.3
V
STM8320
www.samhop.com.tw
Sep,17,2008
2
nC
VDS=15V,ID=7.5A,VGS=4.5V
4.3
1.8
b
Ver 1.0
IS
Maximum Continuous Drain-Source Diode Forward Current
1.3
A



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