STM8320 datasheet(3/11 Pages) SAMHOP

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Symbol

Min

Typ

Max

Units

BVDSS

-30

-1

IGSS

±10

VGS(th)

-1.0

gFS

8.5

VSD

CISS

860

COSS

225

CRSS

135

Qgs

Qgd

tD(ON)

16.8

1.7

tD(OFF)

3.5

Gate-Drain Charge

VDS=-15V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-15V

ID=-1A

VGS=-10V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=-15V,ID=-6.0A,VGS=-10V

Fall Time

Turn-On Delay Time

m ohm

VGS=-10V , ID=-6.0A

VDS=-10V , ID=-3.0A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS , ID=-250uA

VDS=-24V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

P-Channel ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

-3.0

VGS=-4.5V , ID=-4.8A

m ohm

f=1.0MHz

VDS=-15V,ID=-6.0A,

VGS=-10V

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS=0V,IS=-1.2A

-0.76

-1.2

Notes

STM8320

www.samhop.com.tw

Sep,17,2008

VDS=-15V,ID=-6.0A,VGS=-4.5V

8.5

-1.8

Ver 1.0

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,VDD = 20V,VGS=10V,L=0.5mH.

Maximum Continuous Drain-Source Diode Forward Current

-1.2

STM8320 Datasheet(PDF) 3 Page - SamHop Microelectronics Corp.

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