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STM8458 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STM8458
Description  Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PDF  11 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8458 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±10
uA
VGS(th)
1
V
25
gFS
13.8
S
VSD
CISS
580
pF
COSS
82
pF
CRSS
50
pF
Qg
11
nC
10.2
nC
Qgs
17.3
nC
Qgd
20
tD(ON)
11.3
ns
tr
1.2
ns
tD(OFF)
2.9
ns
tf
ns
Gate-Drain Charge
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=20V
ID=1A
VGS=10V
RGEN=3.3 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=20V,ID=6.3A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=6.3A
VDS=10V , ID=6.3A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
N-Channel ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=5.5A
32
32
42
m ohm
c
f=1.0MHz
c
VDS=20V,ID=6.3A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=6.3A
0.79
1.2
V
STM8458
www.samhop.com.tw
Jun,12,2008
2
nC
VDS=20V,ID=6.3A,VGS=4.5V
5.8
1.5
b
Ver 1.0
a
IS
Maximum Continuous Drain-Source Diode Forward Current
6.3
A



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