B772 datasheet(1/2 Pages) SECOS

Part #	B772

Description	PNP Type Plastic Encapsulate Transistors

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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1 / 2 page

-Jun-2004 Rev. B

Page 1 of 2

01

Elektronische Bauelemente

B772

PNP Type

TO-126

Features

* Low speed switching

Plastic Encapsulate Transistors

MAXIMUM RATINGS* TA=25 unless otherwise noted

Symbol

meter

Para

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current –Continuous

-3

A

PC

Collector Dissipation

1.25

W

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55-150

C

o

C

o

C

o

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-100μA ，IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -10 mA , IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100 μA，IC=0

-6

V

Collector cut-off current

ICBO

VCB= -40 V , IE=0

-1

μ

A

Collector cut-off current

ICEO

VCE=-30 V , IB=0

-10

μ

A

Emitter cut-off current

IEBO

VEB=-6V ,

IC=0

-1

μ

A

hFE（1）

VCE= -2V, IC= -1A

60

400

DC current gain

Collector-emitter saturation voltage

VCE(sat)

IC=-2A, IB= -0.2A

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-2A, IB= -0.2A

-1.5

V

Transition frequency

f T

VCE= -5V, IC=-0.1A

f = 10MHz

80

MHz

CLASSIFICATION OF hFE(1)

Rank

R

O

Y

GR

Range

60-120

100-200

160-320

200-400

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

0.76±0.1

Dimensions in Millimeters

7.6±0.2

1: Emitter

2: Collector

3: Base

4.0±0.1

10.8±0.2

2.2±0.1

15.5±0.2

1.27±0.1

2.29 Typ.

4.58±0.1

0.5±0.1

1.3±0.2

2.7±0.2

3.1± 0.1

O

1

2

3

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