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SSF1332E Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSF1332E
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSF1332E Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSF1332E
0.6A, 20V,RDS(ON) 600m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gat Thershold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
StaticDrain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
20
0.02
0.5
1.2
10
1
10
600
850
1.3
0.3
0.5
4
10
15
2
38
17
12
±
V
V/
V
uA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=10V
f=1.0MHz
VDD=10V
ID=0.6A
VGS=10V
RG=3.3
RD=16.7
Ω
Ω
ID=0.6A
VDS=16V
VGS=4.5V
VGS=4.5V, ID=0.6A
VGS=2.5V, ID=0.4A
VGS=0V, ID=250uA
VGS= 6V
±
VDS=20V,VGS=0
VDS=16V,VGS=0
VDS=VGS, ID=250uA
Reference to 25 ,ID=1mA
_
_
_
Source-Drain Diode
_
_
_
_
_
_
_
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VSD
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
IS=1.6A, VGS=0V.
V
1.2
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
2
3.Surface mounted on 1 inch2 copper pad of FR4 board, t 10Sec.
Forward Transconductance
Gfs
S
1
VDS=5V, ID=0.6A
_
_
_
60
2
≦
o
C
o
C
o
C
o
C
o
2
2
2
Ω
01-Jun-2002 Rev. A
Page
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