Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

STT2622 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # STT2622
Description  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT2622 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  STT2622 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH STT2622 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH STT2622 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH STT2622 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
50
0.06
1.0
3.0
30
10
100
1.8
3.2
1
0.5
0.5
±
V
V/
V
uA
uA
uA
nC
nS
pF
Ω
VGS=0V
VDS=25V
f=1.0MHz
VDD= 25V
ID= 500mA
VGS=10V
RG=3.3
RD=50
Ω
Ω
ID=500mA
VDS=40V
VGS=4.5V
VGS=10V, ID=500mA
VGS=4.5V, ID=200mA
VGS=0V, ID= 250uA
VGS= 20V
±
VDS=50V,VGS=0
VDS= 40V,VGS=0
VDS=VGS, ID=250uA
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
mS
600
VDS=10V, ID=500mA
_
_
1.6
C
o
12
10
56
29
32
8
6
__
_
_
50
_
_
_
_
Reference to 25 ,ID= 1mA
C
o
/ Tj
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Forward Transconductance
Gfs
o
C
o
C
o
2
2
2
Source-Drain Diode
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VSD
_
_
IS=600mA, VGS=0V.
V
1.3
2
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 in copper pad of FR4 board; 250OC/W when mounted on min. copper pad.
2
Elektronische Bauelemente
STT2622
520mA, 50V,RDS(ON) 1.8
N-Channel Enhancement Mode Power Mos.FET
Ω
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2 of
4



Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com