Excelics

EPA018BV

DATA SHEET

High Efficiency Heterojunction Power FET

•• VERY HIGH fmax: 120GHz

•• +20.0dBm TYPICAL OUTPUT POWER

•• 13.0dB TYPICAL POWER GAIN AT 18 GHz

•• TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED

GAIN AT 12GHz

•• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE

•• Si

•• ADVANCED EPITAXIAL HETEROJUNCTION

PROFILE PROVIDES EXTRA HIGH POWER

EFFICIENCY, AND HIGH RELIABILITY

•• Idss SORTED IN 5 mA PER BIN RANGE

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

f=12GHz

Vds=6V, Ids=50% Idss

f=18GHz

18.0

20.0*

20.0*

dBm

Gain at 1dB Compression

f=12GHz

Vds=6V, Ids=50% Idss

f=18GHz

13.0

14.5

13.0

dB

PAE

Power Added Efficiency at 1dB Compression

Vds=6V, Ids=50% Idss

f=12Ghz

48

%

NF

Noise Figure

f=12GHz

Vds=2V, Ids=15mA

0.75

dB

Ga

Associated Gain

f=12GHz

Vds=2V, Ids=15mA

12.5

dB

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

30

55

80

mA

Gm

Transconductance

Vds=3V, Vgs=0V

35

60

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=1.0mA

-1.0

-2.5

V

BVgd

Drain Breakdown Voltage

Igd=0.5mA

-9

-15

V

BVgs

Source Breakdown Voltage

Igs=0.5mA

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

140

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

6V

Vgs

Gate-Source Voltage

-8V

-3V

Ids

Drain Current

Idss

Idss

Igsf

Forward Gate Current

9mA

1.5mA

Pin

Input Power

16dBm

@3dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

950mW

800mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

: Via Hole

Chip Thickness: 75

± 13 microns

All Dimensions In Microns