TLV2342, TLV2342Y, TLV2344, TLV2344Y

LinCMOS

™ LOW-VOLTAGE HIGH-SPEED

OPERATIONAL AMPLIFIERS

SLOS194 – FEBRUARY 1997

2

POST OFFICE BOX 655303

description (continued)

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate

LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low input

bias currents. These parameters combined with good ac performance make the TLV234x effectual in

applications such as high-frequency filters and wide-bandwidth sensors.

To facilitate the design of small portable equipment, the TLV234x is made available in a wide range of package

options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has

significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only

1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The

TLV234x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to

2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these

devices as exposure to ESD may result in the degradation of the device parametric performance.

TLV2342Y chip information

This chip, when properly assembled, displays characteristics similar to the TLV2342. Thermal compression or

ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive

epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 MILS TYPICAL

BONDING PADS: 4

× 4 MILS MINIMUM

TJmax = 150°C

TOLERANCES ARE

±10%.

ALL DIMENSIONS ARE IN MILS.

+

–

1OUT

1IN +

1IN –

VDD

(8)

(6)

(3)

(2)

(5)

(1)

(7)

(4)

VDD – /GND

+

–

2OUT

2IN +

2IN –

59

72

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(1)