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TMS418160ADZ Datasheet(PDF) 9 Page - Texas Instruments |
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TMS418160ADZ Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 24 page  TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS891C – AUGUST 1996 – REVISED OCTOBER 1997 9 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 ac timing requirements (see Note 4) (continued) ’418160A - 50 ’418160A - 60 ’418160A - 70 UNIT MIN MAX MIN MAX MIN MAX UNIT tCAH Hold time, column address 10 10 15 ns tDH Hold time, data-in (see Note 9) 10 10 15 ns tRAH Hold time, row address 8 10 10 ns tRCH Hold time, read command referenced to xCAS (see Note 10) 0 0 0 ns tRRH Hold time, read command referenced to RAS (see Note 10) 0 0 0 ns tWCH Hold time, write command during xCAS active (early-write only) 10 10 15 ns tCLCH Hold time, xCAS low to xCAS high 5 5 5 ns tRHCP Hold time, RAS active from xCAS precharge 30 35 40 ns tOEH Hold time, OE command 13 15 18 ns tROH Hold time, RAS referenced to OE 10 10 10 ns tWRH Hold time, write after RAS active (CBR refresh only) 10 10 10 ns tCP Delay time, xCAS precharge 8 10 10 ns tAWD Delay time, column address to write command (read-write operation only) 48 55 63 ns tCHR Delay time, xCAS referenced to RAS (xCBR refresh only) 10 10 10 ns tCRP Delay time, xCAS precharge to RAS 5 5 5 ns tCSH Delay time, RAS active to xCAS precharge 50 60 70 ns tCSR Setup time, xCAS referenced to RAS (xCBR refresh only) 5 5 5 ns tCWD Delay time, xCAS to write command (read-write operation only) 36 40 46 ns tOED Delay time, OE to data in 13 15 18 ns tRAD Delay time, RAS to column address (see Note 11) 13 25 15 30 15 35 ns tRAL Delay time, column address to RAS precharge 25 30 35 ns tCAL Delay time, column address to xCAS precharge 25 30 35 ns tRCD Delay time, RAS to xCAS (see Note 11) 18 37 20 45 20 52 ns tRPC Delay time, RAS precharge to xCAS active 5 5 5 ns tRSH Delay time, xCAS active to RAS precharge 13 15 18 ns tRWD Delay time, RAS to write command (read-write operation only) 73 85 98 ns tCPW Delay time, xCAS precharge to write command (read-write operation only) 53 60 68 ns tREF Refresh time interval 16 16 16 ms tT Transition time 2 30 2 30 2 30 ns NOTES: 4. With ac parameters, it is assumed that tT = 5 ns. 9. Referenced to the later of xCAS or W in write operations 10. Either tRRH or tRCH must be satisfied for a read cycle. 11. The maximum value is specified only to assure access time. |
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