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LE25FW808 Datasheet(PDF) 13 Page - Sanyo Semicon Device

Part # LE25FW808
Description  8M-bit (1024K횞8) Serial Flash Memory with High-Density Read Mode
PDF  27 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LE25FW808 Datasheet(HTML) 13 Page - Sanyo Semicon Device

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LE25FW808
No.A0839-13/27
4-2. Status Register Write
By Status Register Write, BP0, BP1, BP2 and SRWP can be rewritten. RDY, WEN, Bit5, and Bit6 are read-only, BP0,
BP1, BP2 and SRWP are non-volatile.
A timing waveform is shown in Figure 10 and a flow chart is shown in Figure 23.
Status Register Write command consists of the 1st bus cycle and the 2nd bus cycle, and internal Write operation starts
with the rising edge of CS after inputting data after OP-code (01h). Erase and program are automatically performed
inside the device and a Status Register Write rewrites BP0, BP1, BP2 and SRWP non-volatilized data. The write-in data
to read-only bits (RDY, WEN, Bit 5, Bit 6) are don't care.
The end of a Status Register Write is detectable with RDY of a Status Register Read.
The number of times of rewriting of a Status Register Write is 1,000 times (min).
In order to perform a Status Register Write, it is necessary to change WEN of a Status Register into "1" state for WP pin.
Figure 10 Status Register Write
4-3. Contents of Each Status Register
RDY (bit 0)
The RDY register is for detecting the write (program, erase and status register write) end. When it is "1", the device is
in a busy state, and when it is "0", it means that write is completed.
tSRW
Self-timed
Write Cycle
SCK
SI
High Impedance
SO
CS
DATA
01h
15
0
1
2
3
4
5
6
7
8
Mode3
Mode0
8CLK
WP
tWPH
tWPS



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