DMS2220LFDB datasheet(3/6 Pages) DIODES

3 / 6 page

DMS2220LFDB

Document number: DS31546 Rev. 6 - 2

3 of 6

www.diodes.com

March 2009

DMS2220LFDB

SBR is a registered trademark of Diodes Incorporated.

Q1, P-CHANNEL MOSFET - Continued

0.02

0.04

0.06

0.08

0.1

0.12

0.14

567

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

-I , DRAIN CURRENT (A)

= -2.5V

= -4.5V

= -1.8V

0.02

0.04

0.06

0.08

0.1

0.12

0.14

-I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

Fig. 5 On-Resistance Variation with Temperature

-50

-25

100

125 150

T , JUNCTION TEMPERATURE (°C)

0.6

0.8

1.0

1.2

1.4

1.6

= -4.5V

I = -5A

= -2.5V

I = -2A

0.03

0.05

0.07

0.09

0.11

Fig. 6 On-Resistance Variation with Temperature

-50

-25

100

125 150

T , JUNCTION TEMPERATURE (°C)

= -4.5V

I = -5A

= -2.5V

I = -2A

100

1,000

10,000

Fig. 7 Typical Capacitance

-V

, DRAIN-SOURCE VOLTAGE (V)

f = 1MHz

iss

Coss

Crss

Fig. 8 Gate Threshold Variation vs. Ambient Temperature

-50

-25

100

125 150

T , AMBIENT TEMPERATURE (°C)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

I = -250µA

I = -1mA

DMS2220LFDB Datasheet(PDF) 3 Page - Diodes Incorporated

DMS2220LFDB Datasheet(HTML) 3 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL