AS4SD4M16DG-10SLASHIT datasheet(27/50 Pages) AUSTIN

27 / 50 page

SDRAM

AS4SD4M16

Rev. 2.1 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Austin Semiconductor, Inc.

NOTE (continued):

The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must be

applied on each positive clock edge during these states.

Refreshing:

Starts with registration of an AUTO REFRESH command and ends when t

is met.

Once t

is met, the SDRAM will be in the all banks idle state.

Accessing Mode

Starts with registration of a LOAD MODE REGISTER command and ends when t

MRD

has been met. Once t

MRD

is met, the SDRAM will be in the all banks idle state.

Precharging All:

Starts with registration of a PRECHARGE ALL command and ends when t

is met.

Once t

is met, all banks will be in the idle state.

All states and sequences not shown are illegal or reserved.

Not bank-specific; requires that all banks are idle.

May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for precharging.

Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank..

10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with AUTO PRECHARGE enabled and

READs or WRITEs with AUTO PRECHARGE disabled.

11. Does not affect the state of the bank and acts as a NOP to that bank.

AS4SD4M16DG-10/IT Datasheet(PDF) 27 Page - Austin Semiconductor